Product Summary

The FQA11N90C is an N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA11N90C is well suited for high efficiency switch mode power supplies.

Parametrics

FQA11N90C absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 900 V; (2)Drain Current, Continuous (TC= 25℃), ID: 11.0 A; Continuous (TC= 100℃), ID: 6.9 A; (3)Drain Current - Pulsed, IDM: 44.0 A; (4)Gate-Source Voltage, VGSS: ±30 V; (5)Single Pulsed Avalanche Energy, EAS: 960 mJ; (6)Avalanche Current, IAR: 11.0 A; (7)Repetitive Avalanche Energy, EAR: 30 mJ; (8)Peak Diode Recovery dv/dt, dv/dt: 4.0 V/ns; (9)Power Dissipation (TC= 25℃), PD: 300 W; Derate above 25℃: 2.38 W/℃; (10)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds, TL: 300℃.

Features

FQA11N90C features: (1)11A, 900V, RDS(on)= 1.1Ω @VGS= 10 V; (2)Low gate charge (typical 60 nC); (3)Low Crss ( typical 23 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQA11N90C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQA11N90C
FQA11N90C

Fairchild Semiconductor

MOSFET 900V N-Ch Q-FET advance C-Series

Data Sheet

Negotiable 
FQA11N90C_F109
FQA11N90C_F109

Fairchild Semiconductor

MOSFET 900V N-Ch Q-FET advance C-Series

Data Sheet

0-1: $1.66
1-25: $1.49
25-100: $1.36
100-250: $1.22